Abstract Y2O3 thin film was deposited by atomic layer deposition (ALD) with a new precursor yttrium tris(N,N‘-diisopropylacetamidinate), Y(iPr2amd)3, and water. The precursor was thermally stable and volatile and had high reactivity with water. The growth rate of Y2O3 films was 0.8 03/cycle over a wide temperature range (15061280 °C). The films were very pure (C, N 1.5) and 61OH bonds in air-exposed films. A relatively high permittivity (12), a low leakage current density (<10-7 cm2 at 2 MV/cm) and high electrical breakdown field (5 MV/cm) were measured for capacitors prepared from Al2O3 (10 03)/Y2O3/n-Si structures. Uncapped Y2O3 films showed flatband voltage shifts of 1 V and increased leakage current prior to annealing. ALD Y2O3 is a promising dielectric for advanced electronic applications in nanoscale devices.
